Spinmodel Library

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This model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex hybrid circuits before fabrication.

Key words: Magnetic tunnel junction, perpendicular magnetic anisotropy, TMR, reliability issues, process variation, temperature fluctuation, dielectric breakdown



This model file contains magnetic precession model of VCMA-MTJ, STT-assisted magnetic precession model of VCMA-MTJ as well as STT-assisted and thermally-activated magnetic precession model of VCMA-MTJ. It is used to simulate MTJ switching behaviors under given stimulation when taking the Electric Field Effect other than Spin Transfer Torque Effect into consideration, providing an easy way to start the simulation of circuit design with VCMA-MTJ/CMOS.

Key words: Magnetic tunnel junction, Voltage-controlled Magnetic Anisotropy, magnetic precession, STT-assisted precession, thermal disturbance field



This model mainly describes the I-V characteristic and memristive behavior of the ferroelectric tunnel junction. The I-V characteristic is modeled by Gruverman model and Fowler-Nordheim tunneling, respectively, at the low and high voltage. By setting the domain percentage to be a state variable, the memristive behavior is described by Merz’s law, KAI model and creep process model. This model can be used to simulate the FTJ-based non-volatile memory/logic circuits and neuromorphic systems.

Key words: ferroelectric tunnel junction, memristor, non-volatile memory/logic circuits, neuromorphic systems.



This model describes the electrical behaviors of a three-terminal device, where a perpendicular-anisotropy magnetic tunnel junction (MTJ) is fabricated above a heavy-metal stripe. The following effects are taken into account by this model: i) the spin transfer torque (STT) induced by a current flowing through the MTJ; ii) the asymmetry of the STT efficiency between two switching directions; iii) the damping-like and field-like spin orbit torque (SOT) induced by a current passing the heavy-metal stripe; iv) the torque induced by the external magnetic field or exchange bias; v) the dependence of the TMR ratio on the bias voltage; vi) the relationship between the MTJ resistance and the magnetization polar angle. This model can be used to simulate the three-terminal MTJ-based non-volatile memory and logic circuits.

Key words: magnetic tunnel junction, spin transfer torque, spin orbit torque, TMR ratio.